vs-30eth06pbf, VS-30ETH06-N3 www.vishay.com vishay semiconductors revision: 09-jul-15 1 document number: 94019 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 hyperfast rectifier, 30 a fred pt ? features ? reduced q rr and soft recovery ? 175 c t j maximum ? for pfc crm/ccm operation ? low forward voltage drop ? low leakage current ? designed and qualified according to jedec ? -jesd 47 ? material categorization: ? for definitions of co mpliance please see www.vishay.com/doc?99912 description / applications state of the art hyperfast recove ry rectifiers designed with optimized performance of forw ard voltage drop, hyperfast recovery time and soft recovery. the planar structure and the platinum doped life time control guarantee the best ov erall performanc e, ruggedness and reliability characteristics. these devices are intended for use in pfc boost stage in the ac/dc section of smps, inverters or as freewheeling diodes. their extremely optimized stored charge and low recovery current minimize the switch ing losses and reduce over dissipation in the switch ing element and snubbers. product summary package to-220ac i f(av) 30 a v r 600 v v f at i f 1.34 v t rr (typ.) 23 ns t j max. 175 c diode variation single die anode 1 3 2 cathode base cathode to-220ac available absolute maximum ratings parameter symbol test conditions values units peak repetitive reverse voltage v rrm 600 v average rectified forward current i f(av) t c = 103 c 30 a non-repetitive peak surge current i fsm t j = 25 c 200 operating junction and storage temperatures t j , t stg -65 to +175 c electrical specifications (t j = 25 c unless otherwise specified) parameter symbol test conditions min. typ. max. units breakdown voltage, ? blocking voltage v br , v r i r = 100 a 600 - - v forward voltage v f i f = 30 a - 2.0 2.6 i f = 30 a, t j = 150 c - 1.34 1.75 reverse leakage current i r v r = v r rated - 0.3 50 a t j = 150 c, v r = v r rated - 60 500 junction capacitance c t v r = 600 v - 33 - pf series inductance l s measured lead to lead 5 mm from package body - 8.0 - nh
vs-30eth06pbf, VS-30ETH06-N3 www.vishay.com vishay semiconductors revision: 09-jul-15 2 document number: 94019 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 dynamic recovery characteristics (t j = 25 c unless otherwise specified) parameter symbol test conditions min. typ. max. units reverse recovery time t rr i f = 1 a, di f /dt = 50 a/s, v r = 30 v - 28 35 ns i f = 1 a, di f /dt = 100 a/s, v r = 30 v - 23 30 t j = 25 c i f = 30 a ? di f /dt = 200 a/s ? v r = 200 v -31- t j = 125 c - 77 - peak recovery current i rrm t j = 25 c - 3.5 - a t j = 125 c - 7.7 - reverse recovery charge q rr t j = 25 c - 65 - nc t j = 125 c - 345 - thermal - mechanical specifications parameter symbol test conditions min. typ. max. units maximum junction and storage temperature range t j , t stg -65 - 175 c thermal resistance, ? junction to case per leg r thjc -0.71.1 c/w thermal resistance, ? junction to ambient per leg r thja typical socket mount - - 70 thermal resistance, ? case to heatsink r thcs mounting surface, flat, smooth ? and greased -0.2- weight -2.0- g -0.07- oz. mounting torque 6.0 (5.0) - 12 (10) kgf cm (lbf in) marking device case style to-220ac 30eth06
vs-30eth06pbf, VS-30ETH06-N3 www.vishay.com vishay semiconductors revision: 09-jul-15 3 document number: 94019 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 1 - typical forward voltage drop characteristics fig. 2 - typical values of reverse current vs. reverse voltage fig. 3 - typical junction ca pacitance vs. reverse voltage fig. 4 - maximum thermal impedance z thjc characteristics 1 10 t j = 175 c t j = 150 c t j = 25 c 1000 0 3.5 1.5 1 2.5 v f - forward voltage drop (v) i f - instantaneous forward current (a) 100 0.5 2 3 0.01 0.1 1 10 100 0 200 400 v r - reverse voltage (v) i r - reverse current (a) 300 t j = 175 c t j = 150 c t j = 125 c t j = 100 c t j = 25 c 100 0.001 1000 600 500 0.0001 100 1000 0 200 400 500 600 10 v r - reverse voltage (v) c t - junction capacitance (pf) 300 100 t j = 25 c 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 t 1 - rectangular pulse duration (s) z thjc - thermal impedance (c/w) single pulse (thermal resistance) . . p dm t 1 t 2 notes: 1. duty factor d = t 1 /t 2 2. peak t j = p dm x z thjc + t c d = 0.50 d = 0.20 d = 0.10 d = 0.05 d = 0.02 d = 0.01 10 0.001 10
vs-30eth06pbf, VS-30ETH06-N3 www.vishay.com vishay semiconductors revision: 09-jul-15 4 document number: 94019 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 5 - maximum allowable case temperature vs. average forward current fig. 6 - forward power loss characteristics fig. 7 - typical reverse recovery time vs. di f /dt fig. 8 - typical stored charge vs. di f /dt note (1) formula used: t c = t j - (pd + pd rev ) x r thjc ; ? pd = forward power loss = i f(av) x v fm at (i f(av) /d) (see fig. 6); ? pd rev = inverse power loss = v r1 x i r (1 - d); i r at v r1 = rated v r 0 5 10 15 20 25 allowable case temperature (c) i f(av) - average forward current (a) 140 160 180 see note (1) 120 dc 100 80 30 35 40 45 square wave (d = 0.50) rated v r applied 0 1020304045 average power loss (w) i f(av) - average forward current (a) 0 10 30 40 50 d = 0.01 d = 0.02 d = 0.05 d = 0.10 d = 0.20 d = 0.50 dc 20 rms limit 5 152535 60 70 80 90 0 i f = 30 a i f = 15 a 10 100 1000 t rr (ns) di f /dt (a/s) 40 60 80 90 30 50 70 v r = 200 v t j = 125 c t j = 25 c 0 20 100 1000 q rr (nc) di f /dt (a/s) 600 1000 1200 400 800 v r = 200 v t j = 125 c t j = 25 c 0 200 i f = 30 a i f = 15 a
vs-30eth06pbf, VS-30ETH06-N3 www.vishay.com vishay semiconductors revision: 09-jul-15 5 document number: 94019 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 9 - reverse recovery parameter test circuit fig. 10 - reverse recovery waveform and definitions irfp250 d.u.t. l = 70 h v r = 200 v 0.01 g d s di f /dt adju s t q rr 0.5 i rrm di (rec)m /dt 0.75 i rrm i rrm t rr t b t a i f di f /dt 0 (1) (2) (3) (4) (5) (1) di f /dt - rate of change of current through zero cro ss ing (2) i rrm - peak rever s e recovery current (3) t rr - rever s e recovery time mea s ured from zero cro ss ing point of negative going i f to point where a line pa ss ing through 0.75 i rrm and 0.50 i rrm extrapolated to zero current. (4) q rr - area under curve defined by t rr and i rrm t rr x i rrm 2 q rr = (5) di (rec)m /dt - peak rate of change of current during t b portion of t rr
vs-30eth06pbf, VS-30ETH06-N3 www.vishay.com vishay semiconductors revision: 09-jul-15 6 document number: 94019 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 ordering information table ordering information (example) preferred p/n quantity per t/r minimum order quantity pack aging description vs-30eth06pbf 50 1000 antistatic plastic tube VS-30ETH06-N3 50 1000 antistatic plastic tube links to related documents dimensions www.vishay.com/doc?95221 part marking information to-220acpbf www.vishay.com/doc?95224 to-220ac-n3 www.vishay.com/doc?95068 spice model www.vishay.com/doc?95422 2 - current rating (30 = 30 a) 3 - e = single diode 4 - package: t = to-220 5 - h = hyperfast recovery 6 - voltage rating (06 = 600 v) 1 - vishay semiconductors product device code 5 1 3 2 4 6 7 vs- 30 e t h 06 pbf 7 pbf = lead (pb)-free and rohs-compliant - environmental digit: -n3 = halogen-free, rohs-compliant and totally lead (pb)-free
document number: 95221 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 07-mar-11 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 1 to-220ac outline dimensions vishay semiconductors dimensions in millimeters and inches notes (1) dimensioning and tolerancin g as per asme y14.5m-1994 (2) lead dimension and fini sh uncontrolled in l1 (3) dimension d, d1 and e do not in clude mold flash. mold flash shall not exceed 0.127 mm (0. 005") per side. these dimensions are m easured at the outermost extrem es of the plastic body (4) dimension b1, b3 and c1 apply to base metal only (5) controlling dimension: inches (6) thermal pad contour optional with in dimensions e, h1, d2 and e1 (7) dimension e2 x h1 define a zone where stamping and singulation irregularities are allowed (8) outline conforms to jedec to-220, d2 (minimum) where dimensions are derived from the actual package outline symbol millimeters inches notes symbol millimeters inches notes min. max. min. max. min. max. min. max. a 4.25 4.65 0.167 0.183 e1 6.86 8.89 0.270 0.350 6 a1 1.14 1.40 0.045 0.055 e2 - 0.76 - 0.030 7 a2 2.56 2.92 0.101 0.115 e 2.41 2.67 0.095 0.105 b 0.69 1.01 0.027 0.040 e1 4.88 5.28 0.192 0.208 b1 0.38 0.97 0.015 0.038 4 h1 6.09 6.48 0.240 0.255 6, 7 b2 1.20 1.73 0.047 0.068 l 13.52 14.02 0.532 0.552 b3 1.14 1.73 0.045 0.068 4 l1 3.32 3.82 0.131 0.150 2 c 0.36 0.61 0.014 0.024 l3 1.78 2.13 0.070 0.084 c1 0.36 0.56 0.014 0.022 4 l4 0.76 1.27 0.030 0.050 2 d 14.85 15.25 0.585 0.600 3 ? p 3.54 3.73 0.139 0.147 d1 8.38 9.02 0.330 0.355 q 2.60 3.00 0.102 0.118 d2 11.68 12.88 0.460 0.507 6 ? 90 to 93 90 to 93 e 10.11 10.51 0.398 0.414 3, 6 13 2 d d1 h1 q detail b c a b l e1 lead tip l4 l3 e e2 ? p 0.015 a b mm 0.014 a b mm s eating plane c a2 a1 a a a lead assignments diode s 1 + 2 - cathode 3 - anode conforms to jedec outline to-220ac (6) (6) (7) (6) (7) view a - a e1 (6) d2 (6) h1 thermal pad e detail b d l1 d 123 c c 2 x b2 2 x b
legal disclaimer notice www.vishay.com vishay revision: 13-jun-16 1 document number: 91000 disclaimer ? all product, product specifications and data ar e subject to change with out notice to improve reliability, function or design or otherwise. vishay intertechnology, inc., its affiliates, agents, and employee s, and all persons acting on it s or their behalf (collectivel y, vishay), disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained in any datasheet or in any o ther disclosure relating to any product. vishay makes no warranty, representation or guarantee regarding the suitability of th e products for any particular purpose or the continuing production of any product. to the maximum extent permitted by applicable law, vi shay disclaims (i) any and all liability arising out of the application or use of any product , (ii) any and all liability, including without limitation specia l, consequential or incidental damages, and (iii) any and all implied warranties, includ ing warranties of fitness for particular purpose, non-infringement and merchantability. statements regarding the suitability of products for certain types of applicatio ns are based on vishays knowledge of typical requirements that are often placed on vishay products in generic applications. such statements are not binding statements about the suitability of products for a particular applic ation. it is the customers responsibility to validate tha t a particular product with the prope rties described in the product sp ecification is suitable for use in a particular application. parameters provided in datasheets and / or specifications may vary in different ap plications and perfor mance may vary over time. all operating parameters, including ty pical parameters, must be va lidated for each customer application by the customer s technical experts. product specifications do not expand or otherwise modify vishays term s and conditions of purchase, including but not limited to the warranty expressed therein. except as expressly indicated in writing, vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the vishay product could result in personal injury or death. customers using or selling vishay product s not expressly indicated for use in such applications do so at their own risk. please contact authorized vishay personnel to obtain writ ten terms and conditions rega rding products designed for such applications. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is gran ted by this document or by any conduct of vishay. product names and markings noted herein may be trademarks of their respective owners.
|
